IMW65R057M1H Infineon

IMW65R057M1H Infineon
IMW65R057M1H infineon
IMW65R057M1H infineon
IMW65R057M1H infineon
IMW65R057M1H infineon

IMW65R057M1H infineon

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IMW65R057M1H   infineon

•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQrr
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V)

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